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| SRFET AON6710 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFETTM The AON6710/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a low side FET in SMPS, load switchng and general purpose applications. AON6710 and AON6710L are electrically identical. -RoHS Compliant -AON6710L is Halogen Free Features VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 4.7m (VGS = 10V) RDS(ON) < 6.7m (VGS = 4.5V) Top View Fits SOIC8 footprint ! S S S G D D D D G D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S DFN5X6 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain BJ Current TC=25C TC=100C ID IDM IDSM IAR C Maximum 30 20 30 30 100 19 15 30 135 62 25 2.5 1.6 -55 to 150 Units V V A Pulsed Drain Current Continuous Drain TA=25C H Current TA=70C C Avalanche Current Repetitive avalanche energy L=0.3mH Power Dissipation B A A mJ W W C EAR PD PDSM TJ, TSTG TC=25C TC=100C TA=25C TA=70C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case C Symbol t 10s Steady-State Steady-State RJA RJC Typ 14.2 42 1.2 Max 20 50 2.0 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6710 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=1mA, VGS=0V VDS=30V, V GS=0V TJ=125C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125C 1.3 100 3.7 5.3 5.3 90 0.36 0.5 5 3760 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 682 314 0.75 62 VGS=10V, V DS=15V, ID=20A 29 12 12 9.5 VGS=10V, V DS=15V, R L=0.75, RGEN=3 IF=20A, dI/dt=300A/s IF=20A, dI/dt=300A/s 8.5 34 9 18 22 27 12 1.5 72 4512 4.7 6.7 6.7 1.5 Min 30 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of RJA is measured with the device in a still air environment with TA =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsink is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25C. The SOA A curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. J. Maximum current is limited by bonding wire. Prelim: :Jan 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6710 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10V 7V 150 5V ID (A) 120 ID(A) 90 60 30 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 6 Normalized On-Resistance VGS=4.5V 5 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 ID=20A 8 RDS(ON) (m) 125C IS (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C ID=20A VGS=10V 3V VGS=3.5V 4V 20 15 10 25C 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 4.5V 30 25 VDS=5V 180 6V RDS(ON) (m) 4 VGS=10V VGS=4.5V 3 2 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 10 6 4 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6710 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 6 4 2 1.E-09 0 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 RDS(ON) limited 0.E+00 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 VDS=15V ID=20A 6.E-09 5.E-09 Capacitance (pF) Ciss 4.E-09 3.E-09 2.E-09 Coss Crss VGS (Volts) TJ(Max)=150C, TA=25C 200 160 Power (W) 10s TJ(Max)=150C TA=25C 100.0 ID (Amps) 120 80 40 0 0.0001 10.0 100s 1.0 1ms DC 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=2C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton T 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6710 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 ID(A), Peak Avalanche Current 120 100 80 60 40 20 0 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TA=25C Power Dissipation (W) 75 tA = L ID BV - VDD 60 45 30 15 0 0 25 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note B) 40 50 40 Power (W) 30 20 10 0 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 TCASE (C) Figure 14: Current De-rating (Note B) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H) TA=25C Current rating ID(A) 30 20 10 0 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 PD Ton 10 T 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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